ZEISS Crossbeam 750: Revolutionizing Semiconductor Analysis with FIB-SEM

ZEISS has introduced the Crossbeam 750, a groundbreaking solution for analyzing semiconductor structures. Designed for ultra-thin sample preparation (TEM lamellae), tomography, and nanofabrication—including atom probe tomography (APT) sample prep—the system leverages the upgraded Gemini 4 electron-optical column, dual deflector, and modern scanning generator. These enhancements deliver superior image quality and confidence in results.

A standout feature of the Crossbeam 750 is the High Dynamic Range (HDR) Mill + SEM mode. This technology integrates SEM and FIB scanning, suppressing background noise generated by the ion beam. Specialists gain real-time, noise-free visual feedback even during milling parameter adjustments, enabling precise process completion detection, minimized sample damage, and reduced rework.

The system also excels in low-kV operation, critical for TEM lamella preparation. Enhanced resolution and signal-to-noise ratio deliver detailed images with shorter acquisition times, accelerating the transition from sample prep to analysis. This is particularly valuable for failure analysis, yield control, and materials science teams.

Crossbeam 750 enables data-driven decisions early in the milling process, reducing task execution time and increasing workflow predictability. The tool is now available to professionals seeking to boost efficiency and accuracy in nanostructure analysis.